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Improvements for editing the memory contents in Memory View #111
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If you want you can create a PR for this. If that would help, I could also extend the "-msetb" command to support a string and e.g. a series of bytes. For the hex input (wo 'h') I'm not so sure: currently you have to use the extension everywhere else as well. Would be inconsistent here to have a hex input. And how should the decimal input work? |
how should the decimal input work? |
So one would have to enter "10" for 10 or 0xA but if someone enters "F0" it would be 240 or 0xF0? |
Basically, with the preference set to hex:
Similarly, with the preference set to dec:
|
I would like to:
be able to directly type ASCII characters in the right side of the MemoryView (currently that part is read-only)
be able to default to hex when changing the memory contents in the left side of MemoryView (currently I have to type 'h' after each two hex digits)
have the currently edited memory cell automatically advance to the next address after editing the previous address, without having to click into each memory location that I want to edit. This would allow to easily modify multiple consecutive memory location.
I could potentially contribute these changes.
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